BU2520AX DATASHEET PDF
isc website： 1 isc Silicon NPN Power Transistor. BUAX. DESCRIPTION. ·Collector-Emitter Sustaining Voltage VCEO(SUS)= V (Min ). BUAX BUAX; Silicon Diffused Power Transistor;; Package: SOT ( TOP-3D). Details, datasheet, quote on part number: BUAX. BUAX datasheet, BUAX circuit, BUAX data sheet: PHILIPS – Silicon Diffused Power Transistor,alldatasheet, datasheet, Datasheet search site for.
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Typical collector-emitter saturation voltage. September 3 Rev 2.
Typical collector storage and fall time. Switching times waveforms 32 kHz. Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon. Click here to Download.
Switching times waveforms 16 kHz. Typical DC current gain.
Typical base-emitter saturation voltage. Product specification This data sheet contains final product specifications.
Test circuit for VCEOsust. Switching times test circuit. Cfb -VBB t Fig. Stress above one or more of the limiting values may cause permanent damage to the device. SOT; The seating plane is electrically isolated from all terminals. September 7 Rev 2. Collector to emitter voltage Collector to emitter voltage open base Collector current DC Collector current peak value Base current DC Base current peak value Datasheeg base current Reverse base current peak value1 Total power dissipation Storage temperature Junction temperature.
No liability will be accepted by the publisher for any consequence of its use. The information presented in this document does not form part of any quotation or contract, it datawheet believed to be accurate datsheet reliable and may be changed without notice.
Oscilloscope display for VCEOsust. Application information Where application information is given, it is advisory and does not form part of the specification.
Want to post a buying lead? Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.
Forward bias safe operating area. September 1 Rev 2.
BU2520AX Silicon Diffused Power Transistor
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Refer to mounting instructions for F-pack envelopes. How long will receive a response. September 2 Rev 2. Reproduction in whole or datashewt part is prohibited without the prior written consent of the copyright owner.
September 6 Rev 2.
BUAX datasheet & applicatoin notes – Datasheet Archive
Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. September 8 Rev 2.
BU2520AX – Silicon Diffused Power Transistor
New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of datasueet screen colour television receivers.
New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.
Mounted with heatsink compound. UNIT – – 1.