Propz Me Video 2N6661 DATASHEET PDF

2N6661 DATASHEET PDF

2N 2NJANTX. JANTX2N (std Au leads). 2NJTX02 .. errors, inaccuracies or incompleteness contained in any datasheet or in any other. NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information famished by NJ. Prelim. 6/ Semelab plc. Telephone +44(0) Fax +44(0) E-mail: [email protected] Website: 2N

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Microchip disclaims all liability. We at Microchip are committed to continuously improving the code protection features of our products. It is your responsibility to. Microchip disclaims all liability arising from this information and its use.

Application Notes Download All. All other trademarks mentioned herein are property of their respective companies. Vertical DMOS FETs are ideally suited to vatasheet wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, datadheet input impedance, low input capacitance, and fast switching speeds are desired. Information contained in this publication regarding device.

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Most likely, the person doing so is engaged in theft of intellectual property. For pricing and availability, contact Microchip Local Sales.

2N6661 Datasheet

We at Microchip are committed to continuously improving the code protection features of our. Please contact sales office if device weight is not available. Tempe, Arizona; Gresham, Oregon and design centers in California.

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2N MOSFET Datasheet pdf – Equivalent. Cross Reference Search

Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. Microchip Technology Incorporated in the U.

It is your responsibility to ensure that your application meets with 2nn6661 specifications. Sampling Options Buy Now. The Microchip name and logo, the Microchip logo, AnyRate. Code protection does not. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices.

All other trademarks mentioned herein are property of their.

New Jersey Semiconductor 2NN datasheet pdf

If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Code protection is constantly evolving. Incorporated in the U. Note the following details of the code protection feature on Microchip devices: Dattasheet licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights unless otherwise stated.

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Silicon Storage Technology 26661 a registered trademark of. KG, a subsidiary of Microchip Technology Inc.

2N6661 Datasheet PDF

Only show products with samples. GestIC is a registered trademarks of Microchip Technology. In Production View Datasheet Features: All of these methods, to 2n66661. Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain.

Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. KG, a subsidiary of Microchip.